也导出了两方法的耗尽层宽度公式。
本文分析了三探针测试硅外延片中雪崩击穿时耗尽层宽度的面接触模型，理论和实验结果吻合。
In this paper, the area contact model of depletion layer width under avalanche breakdown in Si epitaxial wafer by a three-probe method is analysed. The theory accords with experimental results.
利用泊松方程（零偏压时耗尽层宽度作为边界条件）积分计算出其电场分布、电势分布等重要结特性。
Some important characteristics, such as build-in electric field distribution, build-in potential distribution were calculated by poisson′equation.
应用推荐