Park 等 [1] 在研究光子带 隙(PBG-photonic bandgap)结构的基础上首次提出了 缺陷地结构(DGS-defected ground structure)。
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“螺旋”形缺陷地结构用来抑制谐波效应，使得带通滤波器的整体性能得到显著优化。
Spiral DGS has been employed to suppress the harmonic resonance and thus improve the overall performance.
提出了一种新型的缺陷地结构，并将这种新型的缺陷地结构应用于实际所设计的射频功率放大器中。
This paper presented a novel DGS structure and apply it to the actual design of RF power amplifiers.
设计、制造、测试了两个改进的缺陷地结构电路，测试结果表明该新型DGS可以产生通带和较宽的阻带。
Two improved DGS circuits was designed, fabricated, and measured. Measurements show that the passband or enlarging stopband bandwidth can be obtained with the new DGS circuits.
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