结果就是形成一种混合物，可以承受多于没有加入碳单原子层的氮化硅一倍的压力。
The result was a composite that was able to withstand twice as much pressure as unalloyed silicon nitride.
在铝电解方面，氮化硅结合碳化硅远较阴极碳块耐腐蚀、抗氧化、电阻率高，是理想的电解槽侧壁内衬材料。
Compared with carbon, silicon nitride bonded silicon carbide has better oxidation resistance and bigger resistance ratio, which make it be a perfect line material of al electrolysis cell.
目前对氮化硅材料的电子结构和光学性质的第一性原理研究较少，特别是碳掺杂的氮化硅材料的第一性原理研究更少。
However, the electrical structure and optical properties of Si3N4 have not been investigated in detail by the first principles theory.
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