另外，对碳化硅薄膜的退火处理大多是在真空、空气、氩气或氮气气氛下进行。
In addition, the annealing process of SiC films is mostly carried out in vacuum, argon gas or nitrogen gas ambience.
实验发现，射频频率的变化对碳化硅薄膜的防水汽扩散能力影响最大，气体流量比次之，而功率和气体压力的变化影响较小。
The experiment results indicate that the moisture-resistance capability of SiC x film was mostly influenced by RF frequency and precursor gas flow ratio. It was also found that t…
以碳化硅颗粒增强铝基复合材料的加工为例，对复杂形状金刚石薄膜涂层刀具的制备及应用技术提出了合理建议。
This presentation will be beneficial to the manufacturing technologies of diamond film coated tools with complex geometries. The appropriate ways of utilizing these …
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