热载流子，是指比零电场下的载流子具有更高平均动能的载流子。
... channel hot-carrier 的通道热载子 substrate hot-carrier ejection 热载流子 HCD Hot-carrier Diode 热载流子二极管 ...
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Besides, the field peak near the drain decreases which improves the hot-carrier-effect.
此外,漏端的电场峰值降低,有利于降低热载流子效应。
参考来源 - 纳米SOI MOSFET的结构设计和性能分析·2,447,543篇论文数据，部分数据来源于NoteExpress
对深亚微米器件中热载流子效应(hce)进行了研究。
The hot carrier effects (HCE) in deep sub-micron devices has been studied.
对三种典型的热载流子应力条件造成的器件退化进行实验。
Hot-carrier-induced device degradations are also analyzed by st ress experiments under three typical hot-carrier injection conditions.
对器件的亚阈区导电和RF等特性的热载流子退化，也作了相应的分析。
The degradations of device output conductance, subthreshold conduction and RF characteristics are also analyzed.
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