但已获专利的TMBS结构可消除到漂移区的少数载流子注入，从而最大程度地减少存储的电荷，以及提高转换速度。
The patented TMBS structure, however, diminishes minority carrier injections to the drift region, minimizing stored charges and improving switching speed.
探讨了光生载流子在漂移、扩散和光生伏打效应三种机制下输运迁移以及空间电荷场的形成过程。
The migration of the photocarrier and the formative process of space field induced by photocarrier s drift, diffusion and photovoltaic effect were studied.
以单位面积下漂移区自由载流子浓度为基础，得出漂移区电阻的解析模型。
The drift drain resistance model is derived from the free carrier concentration analyzing in the drift region.
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