可用于单离子注入，离子束混合，单离子或反应离子束溅射淀积以及离子束增强淀积。
It can be used for single ion implantation, ion beam mixing, single ion or reactive ion beam sputter-deposition and ion beam enhanced deposition.
与普通溅射方法相比，本设备的优点是：溅射电压大大降低，而淀积速率提高很多。
Comparing with general sputtering method, this equipment has the advantages of decreasing the sputtering voltage and increasing the rate of deposition obviously.
在离子束溅射石墨靶淀积dlc膜的同时用离子束轰击，对于拓宽和改善DLC膜的性质有重要意义。
It is of great importance to improve the properties of DLC films deposited with simultaneous ion bombardment du-ring film growth by ion beam sputtering on graphite target.
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