...仪;悬空硅;深反应离子刻蚀 [gap=883]Keywords: Notching effect;anemometer;suspended silicon;deep reactive ion etching(DRIE) ...
基于18个网页-相关网页
·2,447,543篇论文数据,部分数据来源于NoteExpress
加速度计用普通的N型硅片制造,为了刻蚀高深宽比的结构,使用了深反应离子刻蚀(DRIE)工艺。
This accelerometer is fabricated by N type silicon wafer. To obtain high aspect ratio structure, deep reactive ion etching(DRIE) process is employed.
采用经过参数优化的DRIE刻蚀深硅槽,并用反应离子刻蚀(RIE)对深槽开口形状进行修正,制造了具有理想侧壁形状的深槽,利于介质的完全填充,避免产生空洞。
By optimizing DRIE parameters and RIE etching the trenches' opening, the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.
应用推荐