... channel photomultiplier 通道光电倍增管 channel region 沟道区 channel resistance 沟道电阻 ...
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在左和右扩散区之间形成沟道区。
A channel region is formed between the left and right diffusions regions.
然后在氧等离子体中用电子束刻蚀法去除沟道区石墨烯形成晶体管的沟道。
They then defined the transistor channel using electron-beam lithography, removing graphene outside of channel regions with an oxygen plasma.
在沟道区的中央沟道部分上形成具有薄的栅氧化物膜的控制栅。
A control gate having a thin gate oxide film is formed over a center channel portion of the channel region.
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