Gate leakage current appears not only in the channel region, but also in the overlap of gate and source / drain region.
栅极漏电流不仅能产生于沟道区域,而且能在栅极与源/漏的交叠区域产生。
参考来源 - MOSFET隧穿漏电流噪声特性及测试方法研究·2,447,543篇论文数据，部分数据来源于NoteExpress
沟道区域中的反型部分在到达漏极之前的夹断点终止。
The inverted portion of the channel region ends at a pinch-off point before reaching the drain.
本发明降低了导电插塞的电阻，并且降低了扩散的离子进入MOS单元的沟道区域的可能性。
By using the invention, the resistance of the conductive plug can be reduced and the possibility of entering a channel area of the MOS unit by diffused ions can be reduced.
在部分耗尽型SOI结构中，SOI中顶层硅层的厚度为50-90nm，因此沟道下方的硅层中仅有部分被耗尽层占据，由此可导致电荷在耗尽层以下的电中性区域中累积，造成所谓的浮体效应。
In partially depleted SOI, the top layer is between 50- to 90-nm thick. Silicon under the channel is partially depleted of mobile charge.
应用推荐