氧化铪是一种化学物质，分子式是HfO2。
Al_2O_3 film can reduce the index of reflection of the semiconductor laser's front surface to nearly 1.607%,and HfO_2 film can reduce index of reflection of the SLA's surfaces to nearly 0.1%.
为半导体激光器出射端面设计的增透膜为单层三氧化二铝,可以将反射率降低至约为1.607%。 为半导体激光放大器设计的增透膜为单层氧化铪,前、后腔面的反射率可以降低至约为0.1%。
参考来源 - 808nm半导体功率放大激光器增透膜研究·2,447,543篇论文数据，部分数据来源于NoteExpress
锆铪分离是制备紫外级氧化铪的关键。
The separation technique between Zr and Hf was the key of the UV grade HfO2 production.
用磁控反应溅射法在不同氧分压下制备了氮氧化铪薄膜。
HfOxNy thin films were deposited by radio frequency reactive magnetron sputtering onto multi-spectral ZnS substrates at different oxygen partial pressure.
本论文中，我们尝试使用一氧化二氮电浆氮化处理，以改善二氧化铪闸极介电层的品质。
In this thesis, we try to use post-deposition N2O plasma nitridation to improve the HfO2 film quality.
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