本文叙述采用双栅砷化镓场效应晶体管和高优值硅外延变容二极管实现UHF电子调谐器低噪声化的有关设计和实验结果。
This paper reports the design and experiments of the low noise UHF electronic tuner consisting of a low noise dual-gate FET and a high merit silicon epitaxial varactor.
第一代的调谐器芯片、射频晶体管和二极管需要高达12至15伏的供电电压。
The first tuner semiconductors, RF transistors and diodes, used supply voltages of as high as 12 to 15V.
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