... doped dielectric 掺杂电介质 doped epitaxial layer 掺杂外延层 doped polycrystalline silicon diffusion 掺杂多晶硅扩散 ...
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利用本发明的方法，通过外延层的掺杂浓度来调节以增加耗尽区的展宽，可进一步提高光子吸收效率。
By utilizing the method, the doping concentration of the epitaxial layer is regulated to increase the widening of the depletion region so as to further improve the photon absorption efficiency.
对于外延层必须达到的工艺参数，提出了一系列减小或抑制外延过程中扩散效应和自掺杂效应的工艺措施和方案，使外延层质量有了明显的提高；
For the parameter of the epitaxial layer, putting forward a series of measures that let up or repress deposition and self-doping when the epilayer processing, improve the epilayer quality.
第一外延层被布置在衬底之上并且被掺杂为也具有第一导电类型。
The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well.
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