现代先进的外延技术使应变层锗硅材料的应用成为可能。
Modern advanced epitaxial growth technology has made the widely application of SiGe strained layer materials possible.
如果样品中由于其他因素造成超晶格层起伏较大，那么超晶格层不仅起不到过滤缺陷的作用还会成为新的缺陷源，降低外延层质量。
The superlattice structure will become new dislocation source and decrease crystalline quality if the superlattice structure is not flat, which is caused by other factors.
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