净应力是失配位错增殖的驱动力，是应变多量子阱稳定的重要判据。
The net stress is a driving force of misfit dislocation multiplication and is a very important factor for strained MQWs stability.
报道了基于混合应变多量子阱有源材料的半导体光放大器及其增益特性。
Semiconductor optical amplifier with mix strained quantum well active material and its gain performance are reported.
通过计算应变多量子阱中的净应力和应变弛豫，讨论了激光器结构中应变多量子阱的稳定性。
In this paper, the stability of strained MQWs in laser structure is discussed in terms of the calculation of net stress and strain relaxation.
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