图14描绘施加于循环存储器装置的编程脉冲。

FIG. 14 depicts programming pulses applied to a cycled memory device.

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用于控制快闪存储器装置的命令数据输入到控制器218。

Command data for controlling the flash memory device is input to the controller 218.

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在其它设计中，存储器装置的其它部分(例如状态机)可计算ecc。

In other designs, other parts of the memory device, such as the state machine, can calculate the ECC.

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