用X射线双晶衍射仪测量了阴极和玻璃热粘结工艺过程中阴极材料外延层和衬底的双晶回摆曲线。
Some double crystal rocking curves of photocathode epitaxy materials and substrates are measured by means of X-ray double crystal diffraction in the bonding process.
本文根据实际测量结果，一叙述了半导体衬底制片质量对外延生长的影响。
Based on actual measurement results, the influence of process quality of semiconductor substrate wafers on epitaxial growth is described.
采用一种新的液相外延工艺，研制出了具有大光胶结构的V型槽衬底内条形可见光发射半导体激光器。
Using a new kind of liquid-phase epitaxy technology, V-channeled substrate inner stripe visible GaAlAs semiconductor laser with a large optical cavity is fabricated.
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