大多数传统的音频功率放大器是用双极型工艺设计和制造，其基础在于良好的双极型三极管特性。
Majority of conventional power amplifiers are designed using bipolar technology on the basis of well-known merits of bipolar transistors.
探讨并分析具有光致负阻特性的双极型硅光电三极管阵列中各单元器件设置偏流隔离电阻的必要性。
The necessity of setting the bias current and segregation resistances in every element of bipolar silicon photo-negative resistance phototransistor array is studied and analysed.
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