以单电子晶体管为研究对象，系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。
The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, single electron tunneling were described with single electron transistor(SET) as the research object.
本文从单带双谷模型出发研究了电子在量子阱内遭到散射时电子状态及隧穿几率的变化。
The electron states and tunneling transmission probability for a double barrier heterostructure system containing scattering centers are solved by using the single-band double-valley theory.
在正统理论的基础上 ，提出了单电子三势垒隧穿结模型的主方程 ，并用线性方程组解法求出了其稳态解 。
The master equation of the single electron triple barrier tunnel junction(TBTJ) model is developed based on the orthodox theory.
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