指出了一般用伏安法测二极管特性曲线一实验中存在的问题，同时给出其改进方法及在实验中应注意的问题。
This paper points out the problems existed in the experiment to test the characteristic curve of diode by voltammetry, and presents a method to improve the experiment.
以光敏二极管和光敏三极管的伏安特性作为设计实验的基础。
The volt-ampere characteristic property with photodiode and photosensitive audion is the basis designing an experiment's.
本文提出用伏安法测绘二极管伏安特性曲线的一种电路新接法，用该接法测量时，不需修正即可完全消除电表内阻的影响。
The influence of the internal resistance of the electrometer can be got rid of completely without any revision when the method is adopted.
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