...穿透率吸收限有红移现象相符与伯斯坦-摩斯 学說不同，推論可能原因为 Mn 2+ 離子杂质在 ZnO 晶格内形成电子陷阱(Electron Traps)，释放 了底部被局限的电子造成能隙Eg 减少。
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deep electron traps 深电子陷阱
shallow electron traps 浅电子陷阱
shallows electron traps 浅电子陷阱
electron beam ion traps 电子束离子阱
It is indicated that two kinds of electron traps, which have different properties, were generatedin the Si/PECVD SiOxNy interface during avalanche injection. The positions in forbidden band andquantitative densities relationship of these two electron traps are provided.
指出了雪崩注入过程中在SiOxNy界面上产生两种性质不同的电子陷阱,并给出它们在禁带中的位置与密度大小关系。
参考来源 - PECVD形成纳米级薄膜界面陷阱特性的雪崩热电子注入研究·2,447,543篇论文数据，部分数据来源于NoteExpress
It is confirmed that iridium ion dopants in the crystals act as electron traps.
进一步说明了铱在卤化银晶体中的电子陷阱作用。
Applications include the electron cooling of ion beams in storage rings and the final deceleration of antiprotons and heavy ion beams in traps.
应用包括在存储环和反质子和在陷阱的沉重的离子束的最后的减速里的电子离子束的冷却。
In moderate field region, traps can be filled by both FN current and direct tunneling of electron into the traps. It results in a quasi-saturation in the leakage current.
在中等电场区域，注入电子能通过FN电流和直接隧穿到达能被填充的陷阱，从而使漏电流产生准态饱和。
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