... Drain water 废水 Drain-gate capacitance 漏栅电容 Drain-source resistance 漏极源极电阻; 漏源电阻 ...
基于36个网页-相关网页
The MOS model used includes short-channel effects, gate-source capacitance, gate-drain capacitance, and output resistance.
使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。
The processes of the bootstrapping from source and drain are analyzed in detail based on the capacitor model of MOSFET and it is pointed out that the gate capacitance mainly plays a part of coupling.
本文从MOS管电容模型出发详细分析了MOS源漏自举电路的自举物理过程，认为其中负载管栅电容主要起耦合作用。
The device used new "building blocks" mesa structure, which reduced gate-drain feedback capacitance.
器件采用了新的“积木式”台面结构，减小了栅-漏反馈电容。
应用推荐