The formation of oxygen precipitates not only had relation to point defects, but also the dopant atoms.
氧沉淀的形成与硅片中点缺陷、掺杂原子有密切关系。
The latest devices, though, are so small that doping their channels involves placing just a handful of dopant atoms among the silicon.
而最新的晶体管体积很小，掺杂沟道时只需在硅中置入少量掺杂原子。
It could be possible to make superconductor-based circuits simply by using a beam of X-rays to control the positions of dopant atoms within a suitable material.
在合适的材料中，使用X射线来控制掺杂剂原子的状态，用这种方法将使制作超导电路成为可能。
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