To increase nucleation density, the methods of introducing defects on substrate surface are more effective in the diamond thin films growth by means of the low pressure vapor phase deposition.

在低压气相生长金刚石薄膜过程中，通过在衬底表面引入缺陷，通常是一种行之有效的提高成核密度的方法。

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This paper emphasized on the vapor density compensating model in the circumstance of vapor's pressure varies in a large scale.

本文重点讨论了在压力变化较大的情况下蒸汽密度补偿的模型。

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The "supersaturation ratio" is the ratio of the excess vapor density to the saturation value.

“过饱和比”是超过饱和值的蒸汽密度与饱和值的比。

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