The parameter of the defect size distribution is deduced according to the relations of the defect and the fault.
再利用缺陷与故障之间的关系，进一步推导出缺陷粒径分布的参数。
A detection method for obtaining the micro bulk defect size in semiconductive materials by analyzing near infrared laser scattering light distribution is presented.
提出了利用近红外激光散射光强分布分析来检测半导体材料内部微体缺陷的检测方法。
Method Design the flaps along the distribution of saphenous nerve based on the size of defect, and repair the defect of soft tissue defect around knee.
方法根据缺损的范围以隐神经分布的区域设计皮瓣，修复膝前软组织缺损。
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