charge to breakdown 击穿电荷
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According to the mechanism of current transport, we suggest a breakdown model in which charge accumulation, trapping density and position of its center of gravity are all considered.
根据电流传输机构，本文提出一种考虑了电荷积累、陷阱密度及其重心位置的击穿模型。
Charge to breakdown of the thin gate oxides was tested and investigated by controlling the amounts of injected hot electrons and holes separately with substrate hot holes injection method.
利用衬底热空穴注入技术分别控制注入到薄栅氧化层中的热电子和空穴量，对相关击穿电荷进行了测试和研究。
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