Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).
碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。
A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal and a diffusion barrier structure between the diode nodes.
具有栅极的二极管非易失性存储单元，其具有电荷储存结构，包括具有额外栅极端的二极管结构、与位于二极管节点之间的扩散阻挡结构。
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