This structure satisfies the equilibrium condition of carrier density at the contact interface for both holes and electrons.
这种结构使载流子在接触界面两边均能维持其平衡值。
In the calculated doped state, the concentration of the holes is larger than that of the electrons, the conductive ratio is influenced by both the carrier concentration and transferring.
非计量掺杂碘时,空穴浓度大于电子浓度,载流子浓度和迁移率同时影响导电率。
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