avalanche injection type memory 雪崩注入存储器
stacked-gate avalanche injection type MOS 叠栅雪崩注入金属氧化物半导体
The edge pre-breakdown of planar-type avalanche photodiode (APD) is resulted from the intense electric field at the junction bend.
平面型雪崩光电二极管(APD)在结弯曲处具有高的电场，导致在结边缘的提前击穿。
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