铟是银白色并略带淡蓝色的金属,质地非常软,能用指甲刻痕。铟的可塑性强,有延展性,可压成片。金属铟主要用于制造低熔合金、轴承合金、半导体、电光源等的原料。 铟无毒,但应避免与皮肤接触和食入。
氧化铟锡 Indium tin oxide ; ITO ; IMITO ; [电子] tin indium oxide
锑化铟 in sb ; InSb-In ; InSn
铜铟镓硒 CIGS ; CuInGaSe ; copper indium gallium diselenide ; SeGaInCu
硫酸铟 [无化] indium sulfate ; Indium sulfate hydrate ; Indium Sulphate
砷化铟 [无化] indium arsenide ; InAs ; indiumarsenideCAS ; indium monoarsenide
磷化铟 InP ; [无化] indium phosphide ; IIlP
氧化铟镓锌 Indium Gallium Zinc Oxide ; IGZO
砷化铟镓 Indium Gallium Arsenide ; InGaAs
氢氧化铟 Hydroxid Indium
磷化铝铟镓 aluminium gallium indium phosphide ; AlInGaP
In particular, indium oxide exhibits good sensitivity both to reducing and oxidizing gases. Therefore, it has been expected a promising application in gas sensor.
由于氧化铟材料对氧化性气体和还原性气体都表现出良好的气敏性能,而被应用于半导体气体传感器。
参考来源 - 氧化铟纳米材料的制备及其气敏性能研究The reaction between Zinc and In2O3 can take place kinetically, resulting in the deposition of indium on zinc. .2.
动力学上In2O3能与Zn发生反应,铟在锌表面沉积。
参考来源 - KOH溶液中铟对锌电化学行为影响的研究·2,447,543篇论文数据,部分数据来源于NoteExpress
例如,人们以前认为铟的原子质量介于砷和硒之间。
Indium, for example, had previously been assigned an atomic mass between those of arsenic and selenium.
一种是氧化锡铟。
目前为止,光电薄膜最有效的材质是铜铟硒化镓(CIGS)。
The most effective material for thin-film photovoltaics so far is copper indium gallium selenide (known as CIGS).
He says not only does arsenic belong under phosphorus, I predict that there is an element that lies below aluminum and above indium.
他认为不仅砷属于在磷下面,我预言还有一个元素,是在铝之上和铟的下边的。
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