漏源极电压（图28）在反射过程结束后并减小到100伏特时场效应晶体管导通。

The drain-source voltage (Fig. 28) starts oscillating at the end of the flyback phase and reaching the minimum of 100V when the MOSFET turns on.

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该电路还包括第二分支电路，该第二分支电路使得耦合到该电路的输出(34)的第二晶体管(25)在下降跃迁期间导通并接着被断开。

The circuit also includes a second subcircuit that causes a second transistor (25) that is coupled to the circuit's output (34) to turn on during a falling transition and then turn off.

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本发明涉及一种具导通孔的电子元件及薄膜晶体管元件的制造方法。

The invention relates to an electronic element with a through hole and a manufacturing method for a film transistor element.

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