耗尽型衬底晶体管 depleted substrate transistor
称为耗尽型衬底晶体管 depleted substrate transistor ; DST
使用耗尽型衬底晶体管 depleted substrate transistor ; DST
利用CMOS工艺下衬底型双极晶体管的温度特性，设计了一种精度较高的温度传感器。
A high accuracy temperature sensor is designed by applying the temperature characteristics of a substrate bipolar transistor in CMOS technology.
此外，缓冲层可以减少晶体管之间的设备和硅衬底平行的传导问题。
In addition, the buffer layer can mitigate parallel conduction issues between transistor devices and the silicon substrate.
碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。
Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).
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