分析了半导体激光器的增益特性，指出了“准”行波放大器的优越性。
The gain characteristics of semiconductor laser amplifier was analyzed and advantages of quasi-TW-SLA were pointed out.
在考虑了俄歇效应的情况下，用行波速率方程组研究了半导体激光器的输出功率与端面反射率的关系。
Taking into account the Auger effect, the output-enhancement coatings applied to the facets of the semiconductor lasers have been investigated using a set of travelling wave rate equations.
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