文章作者提出了一种使用双势垒磁性隧道结来研究纳米尺度结构中弹道区域的自旋翻转散射效应的新方法。
We have developed a method that uses a magnetic double barrier tunnel junction to study spin flip scattering in nanometer sized spacer layers near the ballistic limit.
金属中自旋翻转散射长度远长于电子平均自由程,近来关于自旋翻转散射效应的研究主要集中于扩散区域。
Because the spin-flip length is longer than the electron mean-free-path in a metal, past studies of spin-flip scattering were limited to the diffusive regime.
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