结果表明序列的各脉冲前沿存在斯托克斯光增益；在一定脉冲结构和光强下，介质记忆效应占主导地位。
The gain expression of the Stokes light pulse is given, our results show that the memory effect is very important in high gain region and the Stokes light exists in the lead edge of pulses.
它的的内部化学结构使之不像镉镍电池一样遭受记忆效应的影响。
Nimh have a different internal chemistry and are not as susceptible to the same "memory" problems as NiCds.
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