在经过破坏性读出之后，立即将数据重新写入存储器的操作。
To write data back into memory immediately after a destructive readout.
当有电荷泵效应存在时，浮置扩散放大器就不是非破坏性电压读出。
With such an effect, floating diffusion amplifier can not be taken as a nondestructive voltage sensor of a signal.
铁电场效应晶体管（FFET）存储器能够实现非破坏性读出，是一种比较理想的存储方式，因此从一开始就受到人们极大的关注。
Due to the advantage of non-destruction read out, Ferroelectric Field Effect Transistor (FFET) is supposed to be the ideal potential memory device and has been widely investigated.
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