方形光二极管阵列包括四个集成在通用磷化铟（InP）衬底上的光二极管单片集成电路，采用低制造、集成与测试率的铟镓砷化物/磷化铟半导体工艺制造。
The Quad PD Arrays consist of four photodiodes monolithically integrated on a common indium phosphide (InP) substrate, and are fabricated using a low FIT rate InGaAs/InP semiconductor process.
承载高测试电压的导体也应该采用屏蔽，以防止与邻近的低电平电路发生干扰。
Shielding may also be applied to a conductor carrying a high level test voltage to prevent interference with nearby low level circuits.
而保护意味着使用保持在与高阻抗电路相同电位的附加的低阻抗导体来阻止可能的干扰电压或电流。
Guarding implies the use of an added low impedance conductor, maintained at the same potential as the high impedance circuit, which will intercept any interfering voltage or current.
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