如果栅极电阻更是降低了，门极电流的5毫安将会更早的周期内达到和SCR将提早火。
If the gate resistance is reduced even more, the 5ma of gate current will be reached even sooner during the cycle and the SCR will fire earlier.
该IX2120B补充IXYS ICD广泛的高压栅极驱动器， 低侧栅极驱动器，光隔离门极驱动器及全系列IXYS功率半导体的产品组合。
The IX2120B complements IXYS ICD's extensive portfolio of high voltage gate drivers, low side gate drivers, optically isolated gate drivers and the full range of IXYS power semiconductors.
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