...路的噪声特性提取出来并公式化到行为级模型代码里,使得我们此锁相环路行为级模型能大致接近实际传统的晶体管级(transistor level)的仿真结果,可以用于设计锁相环路某个模块时,与其它模块的行为级模型混合仿真进行即时验证,以缩短每次都使用Spice仿真耗费的时间...
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晶体管级模拟 transistor level simulation ; transistor level simulation,transistor level simulation
晶体管级模仿 transistor level simulation
晶体管级提取 transistor-level extraction
串联补偿晶体管级 series-compensated transistor stage
晶体管多级放大器 transistor multistage amplifier
高级晶体管 high level transistor transistor logic
双极晶体管前级 bipolar front end
英特尔公司(Intel)称其在晶体管技术中取得了重大突破——应用三栅级晶体管技术的3D芯片将进入量产阶段。 该技术首次亮相于2002年。
Intel claimed a breakthrough in transistor technology by announcing that it was ready to use its 3D Tri-Gate chip, first unveiled in 2002, in high-volume manufacturing.
该芯片的判决电路采用SCFL(源级耦合晶体管逻辑)的D触发器结构，根据矢量叠加原理设计，采用差动电流放大器构成可调移相器。
The decision circuit of the chip is applied with a DFF using SCFL structure and its tuned phase shifter with differential current amplifiers according to the principle of vector addition.
提出了一种提高高压垂直双扩散MOS场效应晶体管(VDMOSFET)的体二级管恢复速度的新方法。
A new approach to improve the high-voltage vertical double-diffused MOSFET (VDMOSFET) body-diode recovery speed is proposed.
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