本发明还 涉及一种对非易失性存储器器件中的数据进行保护的方法。
The invention further relates to method of protecting data in a non-volatile memory device.
本发明提供一种具有多层隧道绝缘体的存储器单元晶体管及存储器器件。
The invention provides a memory cell transistor having multi-layer tunnel insulator and memory device.
量子比特和存储器之间通过为我们称为共振器件的设备连接，振荡电路使量子比特的值能够保存一段短的时间。
The links between the qubits and the memory contain devices known as resonators, zigzagging circuits inside which a qubit's value can live on for a short time.
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