并使用连续性方程，在考虑表面复合过程的情况下，提出了短二极管的少子寿命计算公式。
This paper calculates the expression between minority-carrier lifetime and switching time in short diode by analyzing the continuity equation when considering the surface recombination.
分析该复合函数的不同线段之间的连续性。
The continuity between different line segments of the compound function is also analysed.
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