本文介绍了几种新型复合二极管，包括变容二极管、开关二极管、二极管阵列、阻尼二极管、调制二极管和肖特基二极管等。

In this paper, some new multiple diode, such as varicap diode, switching diode, diode array, damper diode, modulation diode and Schottky diode are discussed.

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并使用连续性方程，在考虑表面复合过程的情况下，提出了短二极管的少子寿命计算公式。

This paper calculates the expression between minority-carrier lifetime and switching time in short diode by analyzing the continuity equation when considering the surface recombination.

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采用直拉单晶硅片代替成本较高的外延硅片，采取铂扩散的方法引入复合中心，从而控制少子寿命以减少快恢复二极管的反向恢复时间。

Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode.

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