半导体功率器件 Semiconductor Power Device
金氧半导体功率晶体管 MOS power transistors
半导体功率器件理论 Theory of Semicmductor Power Devices
半导体功率放大激光器 semiconductor power amplificative laser
双极结型晶体管，涉及半导体功率器件技术领域。
A bipolar junction transistor relates to the technical field of a semiconductor power device.
PN结构成了几乎所有半导体功率器件的基础，其雪崩击穿电压直接决定了相关器件的工作电压范围。
PN junction is the foundation of almost all the power devices. The avalanche breakdown voltage of PN junction determines the work voltage range of related power devices.
近年来，由于半导体功率器件工艺的进步和成本的降低，微波固态发射机越来越多地为各类微波系统所采用。
Recently, duce to the improvements of semiconductor power device technology's and dropping of costs, more and more solid state transmitters have been adopted by various microwave systems.
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