本文首先简要地回顾了非晶半导体的历史和近年来含氢非晶硅瞋的迅速进展。
This paper firstly gives a brief review about the history of amorphous semiconductor and the rapid progress in hydrogenated amorphous silicon (a-Si: h) film in recent years.
这种前驱物在920k以下为绝缘体，在920k由绝缘体转变为非晶半导体。
This amorphous B_C_N behaves as an insulator below 920k, and transforms into semiconductor above 920k.
本文应用统计物理的方法，讨论了非晶半导体的掺杂效应，特别是在低温下的特性。
This article discusses doping effects in amorphous semiconductors, especially the properties at low temperatures, using the method of statistical physics.
以一定的结构模型分析探讨并从实验上证实了非晶半导体中短程序、中程序的存在。
The structure model in amorphous semiconductor was analysed and probed into in this paper, and confirm the structure of middle and short range order in amorphous semiconductor by means of experiment.
本文以层状的CTRW模型为基础，对非晶半导体超晶格中的瞬态光电导作了理论计算。
On basis of a layered CTRW model the transient photoconductivity in amorphous semi-conductor superlattices is calculated.
通过计算电子由一种缺陷中心向另一种缺陷中心的跳跃几率，解释了非晶半导体中的低温带隙跳跃导电问题。
The hopping conduction in energy gap of amorphous semiconductors at low temperature is explained by calculating hopping probability when an electron hops from one defect center to the other.
以玻璃为基底的非晶硅图形式结晶，对于研制用于矩阵液晶显示的薄膜半导体具有重要意义。
Patterned crystallization of amorphous silicon (a-Si) on substrates of glass is very important for the fabrication of thin film transistor used in active matrix liquid crystal displays.
然后执行热处理步骤，以便使有缺陷的半导体晶体材料的非晶化区域再结晶。
A thermal treatment step is next performed so as to recrystallize the amorphized region of the defective semiconductor crystal material.
提供了一种方法，其中，对有缺陷的半导体晶体材料执行非晶化步骤，随之以热处理步骤。
A method in which a defective semiconductor crystal material is subjected to an amorphization step followed by a thermal treatment step is provided.
该网络系统主要由非晶硅半导体PIN光电探测阵列和“胜者全取”电子网络组成。
The system is mainly composed of a Si PIN photo electrical detector and WTA electrical network.
该网络系统主要由非晶硅半导体PIN光电探测阵列和“胜者全取”电子网络组成。
The system is mainly composed of a Si PIN photo electrical detector and WTA electrical network.
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