通过实验探讨了APD的温度特性，得到了APD的雪崩电压、暗电流、光电流、等效噪声功率与温度的关系。
Experiments were done to probe into the characteristics of APD. The relationships between avalanche voltage, dark current, photocurrent, NEP and temperature were educed separately.
因此很多这类微型通信设备可能仅需一节小型的五号电池（AA型，电压1.5伏）就可以工作，而传统的雪崩光电探测器需要20-30伏的电量供应。
Thus many of these tiny communication devices could potentially be powered by just a small AA-size battery, while traditional avalanche photodetectors require 20-30V power supplies.
超快速低损耗控制雪崩整流。重复峰值反向电压150V的平均正向电流2.4A。
Ultra fast low-loss controlled avalanche rectifier. Repetitive peak reverse voltage 150 V. Average forward current 2.4 A.
将单光子探测器的研制分为偏置电压、前置放大、雪崩信号提取、温度控制和数字控制电路五个模块。
The SPD R&D includes five modules: SPD bias voltage, pre-amplification, avalanche signal extraction, temperature control and digital control circuit.
模拟分析表明 ，采用该结构 ，器件的雪崩击穿电压能提高到理想平行平面结的 90 %以上 ，器件的大电流特性和频率特性也有所改进 。
The simulation analysis indicates that with this structure the avalanche breakdown voltage of RF power transistors can be increased to be over 90% of that for an ideal parallel .
重点阐述大气压下辉光放电（APGD）技术的现状，解释了电子雪崩模型和流注放电理论，并以电压- 电流波形图和电压-电荷李萨育图鉴别介质阻挡放电与大气压下辉光放电。
The common models to explain APGD are electron avalanche model and streamer discharge model. APGD and DBD can be distinguished by voltage-current waveform and voltage-charge Lissajous figure.
PN结构成了几乎所有半导体功率器件的基础，其雪崩击穿电压直接决定了相关器件的工作电压范围。
PN junction is the foundation of almost all the power devices. The avalanche breakdown voltage of PN junction determines the work voltage range of related power devices.
PN结构成了几乎所有半导体功率器件的基础，其雪崩击穿电压直接决定了相关器件的工作电压范围。
PN junction is the foundation of almost all the power devices. The avalanche breakdown voltage of PN junction determines the work voltage range of related power devices.
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