本文叙述了液态金属镓离子源的制做方法和特性研究。
In this paper, we have described the manufacturing method of liquid metal Ga ion source (LMIS) and its properties.
叙述了为纳米聚焦离子束装置研制的镓液态金属离子源的制备。
In this paper, Development of liquid metal ion source for nanometer focused ion beam system is introduced.
报道了利用离子注入技术研制出一种用于手机的超低插损砷化镓单片射频单刀双掷开关。
An ultra low insertion loss GaAs MMIC RF SPDT switch based on full-ion-implantation technology is reported.
氮化镓是增长了等离子体辅助(111)和分子束外延(001)硅衬底上氮化硅缓冲层使用铪。
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers.
这样等离子体干法蚀刻对氮化镓的电气性能的损伤有显著降低。
The plasma dry etching method is of evidently-reduced damage to the electrical performance of the allium nitride.
这样等离子体干法蚀刻对氮化镓的电气性能的损伤有显著降低。
The plasma dry etching method is of evidently-reduced damage to the electrical performance of the allium nitride.
应用推荐