研究了镧掺杂对漏电特性的影响，以及肖特基势垒电流模型。
The effects of Lanthanum doping on leakage current characteristics were also studied by Shottky model.
研制了三类不同金属和III族氮化物接触的肖特基势垒二极管。
Schottky barrier diodes with different metal on III nitride have been fabricated.
膜的可蚀性及肖特基势垒的热稳定性能够满足自对准栅IC的要求。
The etched ability of the films and the high temperature stability of the Schottky barrier satisfy the requirements of SAG ICs.
实验表明该膜有良好的肖特基势垒特性和对硅器件的表面钝化作用。
The experiment results show that the Schottky barrier properties and the surface passivation actions to silicon devices of the films are good.
肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.
此法由于没有反向传导电流的影响，所以，比利用肖特基势垒方法要精确些；
This method is more exact than Schottky Barrier method by avoiding influence of back conductive current.
应力试验后的样品，肖特基势垒接触界面模糊，有明显的互扩散和反应发生．。
The AES suggests that the interaction between gate metallization and GaAs active layer has taken place and the Schottky contact interface becomes ambiguous after stressing.
肖特基势垒整流器。最大重复峰值反向电压50V最大平均正向整流电流8.0A。
Schottky barrier rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 8.0 a.
肖特基势垒整流器。最大重复峰值反向电压20V最大平均正向整流电流3.0A。
Schottky barrier rectifier. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 3.0 a.
肖特基势垒整流器。最大重复峰值反向电压40V最大平均正向整流电流1.0A。
Schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 1.0 A.
肖特基势垒整流器。最大重复峰值反向电压30V最大平均正向整流电流3.0A。
Schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 3.0 a.
肖特基势垒整流器。最大重复峰值反向电压30V最大平均正向整流电流1.0A。
Schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 1.0 a.
肖特基势垒整流器。经常性最大峰值反向电压20V最大平均正向整流电流3.0A。
Schottky barrier rectifier. Maximum recurrent peak reverse voltage 20 V. Maximum average forward rectified current 3.0 a.
肖特基势垒整流器。经常性最大峰值反向电压40V最大平均正向整流电流1.0A。
Schottky barrier rectifier. Maximum recurrent peak reverse voltage 40 V. Maximum average forward rectified current 1.0 a.
肖特基势垒整流器。经常性最大峰值反向电压30V最大平均正向整流电流3.0A。
Schottky barrier rectifier. Maximum recurrent peak reverse voltage 30 V. Maximum average forward rectified current 3.0 a.
肖特基势垒整流器。经常性最大峰值反向电压30V最大平均正向整流电流1.0A。
Schottky barrier rectifier. Maximum recurrent peak reverse voltage 30 V. Maximum average forward rectified current 1.0 a.
在分析4hsic肖特基势垒二极管正向电流热电子发射理论的基础上，计算了肖特基势垒高度？
Based on the thermionic emission theory of the current density of4h-sic schottky barrier diodes under the forward bias the calculations for the schottky barrier height?
肖特基势垒整流器。案例负。经常性最大峰值反向电压50V最大平均正向整流电流8.0A。
Schottky barrier rectifier. Case negative. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 8.0 A.
肖特基势垒整流器。最大的经常峰值反向电压40v。最大RMS电压21v。最大直流阻断电压40v。电流1.0A。
Schottky barrier rectifier. Max recurrent peak reverse voltage 40v. Max RMS voltage 21v. Max DC blocking voltage 40v. Current 1.0a.
肖特基势垒整流器。最大的经常峰值反向电压30v。最大RMS电压21v。最大的隔直流电压30v。电流1.0A。
Schottky barrier rectifier. Max recurrent peak reverse voltage 30v. Max RMS voltage 21v. Max DC blocking voltage 30v. Current 1.0a.
本文介绍了使用低势垒肖特基二极管(LBSD)作为检测微波信号功率元件的微波毫微瓦功率传感器。
Microwave nW power sensor USES low barrier schottky diode (LBSD) as a component for testing the power of microwave signals.
本文介绍了使用低势垒肖特基二极管(LBSD)作为检测微波信号功率元件的微波毫微瓦功率传感器。
Microwave nW power sensor USES low barrier schottky diode (LBSD) as a component for testing the power of microwave signals.
应用推荐