模拟结果显示：无论是单轴压应力还是双轴张应力，都使得空穴迁移率增大。
The simulation results show that both uniaxial compression and biaxial tension can enhance the hole mobility.
本文主要研究应变硅空穴各机制散射几率及空穴迁移率与晶向、应力的理论关系。
The main work is focused on models of hole scattering mechanisms and hole mobility which is related to the crystal orientations and stress of strained Si.
首先分析了应变硅形成机理、能带结构变化、空穴态密度有效质量，进而分析了空穴迁移率增强机理。
The formation mechanism, energy band, hole density-of-state effective mass of strained si have been analyzed first., then hole mobility enhancement mechanism is analyzed.
例如，通过在沟道中引入适当的压应力和张应力能分别提高PMOS的空穴迁移率和NMOS的电子迁移率。
For example, the hole mobility in PMOS and the electron mobility in NMOS can be significantly enhanced by introducing appropriate compressive and tensile channel stresses, respectively.
而霍耳系数取决于半导体材料中电子浓度和空穴浓度的相对大小及其迁移率之比。
Hall coefficient depends on electronic concentration and the relative values of empty hole concentrations and their migration rate in the semiconductor.
这两个样品在氧气氛中均是氧离子与电子空穴的混合导体，具有几乎相同的氧离子迁移数。
Both the samples are all a mixed conductor of oxide-ion and electron hole with an almost same oxide-ionic transport number under oxygen atmosphere.
在电场作用下，电子与空穴分离，分别迁移到粒子表面的不同位置，与溶液中相似的组分进行氧化和还原反应。
In the electric field, and thee-hole separation, were moved to different locations on the surface of particles, and the solution is similar to the component for oxidation and reduction.
非计量掺杂碘时，空穴浓度大于电子浓度，载流子浓度和迁移率同时影响导电率。
In the calculated doped state, the concentration of the holes is larger than that of the electrons, the conductive ratio is influenced by both the carrier concentration and transferring.
增强的空穴沟道迁移率导致导通电阻的沟道部分减小，因此，有利地减少了装置的全“导通”电阻。
The enhanced channel mobility of holes leads to a reduction of the channel portion of the on-state resistance, thereby advantageously reducing total 'on' resistance of the device.
增强的空穴沟道迁移率导致导通电阻的沟道部分减小，因此，有利地减少了装置的全“导通”电阻。
The enhanced channel mobility of holes leads to a reduction of the channel portion of the on-state resistance, thereby advantageously reducing total 'on' resistance of the device.
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