标签硅锗多量子阱垂直方向子带间吸收色散效应。
SiGe multi quantum Wells normal incidence intersubband absorption dispersion effect.
的硅锗gn3s取样器是一个非常强大的，很难用GPS接收机。
The SiGe GN3S Sampler is a very powerful, very hard to use GPS receiver.
并且受边界散射效应的影响，热导率值随硅锗原子百分比的不同发生变化；
The thermal conductivities change with different Si and Ge atoms percent because of the effect of interface scatterings;
结果表明，硅锗合金热导率具有明显的尺寸效应，显著小于大体积晶体的实验值；
The results of calculations demonstrated that the thermal conductivities of Si-Ge alloy. is remarkably lower than the corresponding bulk experimental data and show obvious size effect;
该技术的研发团队展示了几种原子级尺寸的，采用不同的硅锗材料制成的分层结构纳米线，这种纳米线可以有效地传输电荷。
The development team demonstrated nanowires with layers of the different silicon and germanium materials that were atomically sharp and therefore more efficient at carrying electronic charges.
1885年，当门捷列夫描述过的埃卡-硅被发现并命名为锗时，也带来了额外的支持。
Additional support came in 1885 when eka-silicon, which had also been described in advance by Mendeleyev, was discovered and named germanium.
锗早已应用于许多商用芯片中，虽然只是简单地用于提高电路速度，但相对硅来说其拥有好得多的光学性质。
Germanium is already used in many commercial chips simply to improve the speed of electrical circuits, but it has much better optical properties than silicon.
镓砷化物，硅，和锗元素都属于半导体，而如今半导体在所有的现代电子元件中都会用到。
Gallium arsenide, silicon, and germanium are all examples of semiconductors, the type of material used in virtually all modern electronics.
低温暗物质研究II号在极度低温中进行，并侦测（暗物质）粒子在探测器重撞击锗元素以及硅晶体时释放的能量。
CDMSII operates at extremely low temperatures and detects the energy released when particles hit atoms in germanium and silicon crystals within the detectors.
有别于通常用于激发激光的物质，锗元素可以很容易的融入目前广泛使用的硅制芯片。
Unlike the materials typically used in lasers, germanium is easy to incorporate into existing processes for manufacturing silicon chips.
硅和锗都需要在高温下层叠。
Both the silicon and the germanium were deposited at high temperatures.
IBM的设备由硅（Silicon）和锗制造，这些材料已经被广泛用于微处理器芯片产品中。
The IBM device is made of Silicon and Germanium, the materials already widely used in production of microprocessor chips.
在硅的容量达到极限后，锗有望成为下一个伟大的芯片材料。
Germanium could be the next great chip material after silicon's limits have been reached.
除了硒和汽相沉积的锗和硅之外，玻璃至少是二原子的。
Apart from selenium and vapour - deposited germanium and silicon, glasses are at least diatomic.
现在，制造商们看到硅连续小型化生产存在的问题，因此，锗正经历着复兴之路。
Now, as manufacturers see problems with the continued miniaturization of silicon, germanium is experiencing a revival.
但是就当工程师们找到如何制作集成电路并进行大规模生产时，硅因为更容易使用而取代了锗。
But as engineers worked out how to make integrated circuits and manufacture them on a large scale, germanium was set aside for silicon because it's easier to work with.
除此之外，相对于含量稀少的锗元素，硅是相当普遍的化学元素。
Also, silicon is a very common chemical element, whereas germanium is relatively rare.
本文研究了金刚石车削单晶锗、硅时表面粗糙度随切削方向的变化规律。
The variable regularity of surface roughness on diamond turned single crystal germanium and silicon was investigated in this paper.
和铁的情况一样，纯净状态的硅和锗在工业上几乎没什么用途。
B as is the case with iron, silicon and germanium in their pure state are of little use in industry.
为从高硅含锗物料中提取锗，进行了直接蒸馏、加碱浸出、加碱焙烧和HF浸出试验。
Direct distillation, alkaline leaching, alkaline calcinations and HF leaching test were conducted to extract germanium from high silicon material containing germanium.
近年来锗硅合金在高速器件和光电子应用中有大量的可能使用研究。
Recently alloys of silicon and germanium have been studied a great deal for possible use in high-speed device and optoelectronics applications.
为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。
To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device.
现代先进的外延技术使应变层锗硅材料的应用成为可能。
Modern advanced epitaxial growth technology has made the widely application of SiGe strained layer materials possible.
包括锗硅单层、多层结构的外延生长、以及金属诱导生长多晶锗硅和肖特基二极管原型器件的制备。
The research focused on the growth of SiGe single layer, multi-layers, metal induced growth of poly-SiGe, Schottky barrier diodes (SBDs) were fabricated.
锗的导电率比硅高。
常用的本质半导体是硅、锗以及砷化镓等的单晶。
Some common intrinsic semiconductors are single crystals of silicon, germanium, and gallium arsenide.
本文讨论存在于晶态和非晶态硅(锗)中的原子相关性及二者之间的联系，给出原子相关性的定量表达式。
This paper analyses the atomic correlations in crystalline and amorphous si and Ge and discusses their relationship. Expressions for the atomic correlations are presented.
另一个重要的结果是，锗团簇的结构畸变没有相应的硅团簇严重。
Our another important result is that the structural distortion of Ge cluster is not severe as that of corresponding Si clusters.
它们可以镀在硅或锗等材料上。
They can be manufactured on such materials as silicon or germanium.
它们可以镀在硅或锗等材料上。
They can be manufactured on such materials as silicon or germanium.
应用推荐