金属化合物有硼化物、硅化物、复合碳比物等。
Metallic compounds include boride, silicious and compound carbide, etc.
本文论述了在钴基合金上获得硅化物层的可能性。
This paper deals with the possibility of obtaining siliconizing layer on cobalt base alloy.
提高体区掺杂浓度、增加硅膜和硅化物厚度能够减小增益。
The results show that the MOSFETs, with higher doping, thicker si film and silicide, have lower parasitic bipolar gain.
本发明单相钆硅化合物以及制备方法，涉及稀土硅化物材料。
The invention discloses single-phase gadolinium-silicon compounds and the method for preparation, and relates to a rare earth silicide material.
用掠角沟道技术和透射电子显微镜分析了这种硅化物的结构。
The structure of synthetic silicides has been investigated with the analysis of channeled low Angle emergence and TEM.
半导体结型二极管包括硅，所述硅与硅化物相接触时结晶化。
The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide.
目前产品以有机卤化物、有机硅化物、氮化物系列产品为主。
We have a production line of organic chloride, silicide, nitride compounds and etc.
本发明方法制备的金属硅化物层热稳定性高，且生长速度可控。
The metal silicide layer prepared by the method has high heat stability and controllable growth speed.
因此在硅基底上形成金属硅化物薄膜也被广泛应用于半导体工业。
The formation of silicides from the reaction between deposited thin metal films and Si substrates has wide application in the semiconductor industry.
阐述了稀土金属硅化物的生长工艺和与硅衬底间势垒及界面特性。
The growth techniques, the barrier states and the interfaces for rare earth silicides were thoroughly described.
一种微波氢等离子体制备金属硅化物薄膜的方法，用于薄膜制备领域。
The invention is a preparation method of metal silicide film by microwave hydrogen plasma, relates to film preparation field.
而硅化物析出协同促进位错滑移集中化，是热稳定性下降的次要因素。
The precipitation of silicide may promote the intensity of slip and is the minor reason for the ductility loss.
精细陶瓷一般以氧化物、氮化物、硅化物、硼化物、碳化物等为主要原料。
The raw materials: break through the traditional boundaries of using clay as raw materials, fine ceramics' raw materials are generally oxides, nitrides, silicides, borides, carbides etc.
观察到氧杂质对形成条件的影响，简单讨论了离子束混合形成硅化物的机理。
The effect of oxygen impurity on silicide formation has been observed. Finally, the mechanism on the formation of…
观察到氧杂质对形成条件的影响，简单讨论了离子束混合形成硅化物的机理。
The effect of oxygen impurity on silicide formation has been observed. Finally, the mecha…
碳烯和硅烯是分属于碳化物和硅化物中的两类反应活性中间体。两者甚为相似。
Carbene and silylene are two kinds of reactive activity intermediates which belong to carbide and silicide separately, but they are quite similar.
采用硅化物阻挡层和A1多层金属布线方法，解决了欧姆接触和铝的电迁移问题。
And by the means of silicide, resist layer and aluminium multilayer metal lines, the questions of ohmic-contact and A1 electron mobility are resolved.
本发明属于微电子器件技术领域，具体为一种形成超薄可控的金属硅化物的方法。
The invention belongs to the technical field of microelectronic devices, in particular to a method for forming ultrathin controllable metal silicide.
硅化物可以提供用于结晶化的模板，降低了硅的缺陷密度并且提高了其导电性。
The silicide may provide a template for crystallization, decreasing the defect density of the silicon and improving its conductivity.
其它硅化物层(50.4 - 50.6)处于源极、漏极和多晶硅栅极的顶部。
Other silicide layers (50.4-50.6) are on the tops of the source, drain and polysilicon gate.
所述多晶硅瓦片（14.1、14.2）具有硅化物层（50.1、50.2）。
The polysilicon tiles (14.1, 14.2) have silicide layers (50.1, 50.2).
本发明公开了一种金属硅化物的形成方法，包括步骤：提供一表面含硅材料的衬底；
The invention discloses a forming method for metal silicide, which comprises the following steps of: providing a substrate with the surface having silicon material;
本文综述了稀土硅化物的特性、制备技术及其进展。介绍了稀土金属硅化物在器件方面的应用。
The characteristics of re silicides and the progress in preparation of re silicides are summarized, and their applications in devices are introduced.
目前主要的改善方法是向铝包镍中添加元素，例如：添加金属钼、镍硼粉和难熔金属硅化物等。
The main measurement to improve its properties is to add something to the nickel-aluminum system, such as metallic molybdenum, nickel-boron and refractory metal silicates.
这个硅化物界面层诱导了三明治膜的平面内磁各向异性，从而导致了易轴上高灵敏度巨磁电阻效应。
The silicide layer formed at interface was thought to induce the in plane magnetic anisotropy in the sandwiches, which consequently resulted in the high field sensitivity of GMR.
一些藻类的细胞壁的化学成分有所不同，例如硅藻属的细胞壁含有硅化物，石灰质藻类的细胞壁含有钙。
The walls of some algae differ, e. g. the silica boxes enclosing diatoms, and the calcareous layer on the cell walls of calcareous algae.
特别是，当难熔金属硅化物薄膜是硅化物薄膜的钨，铜的浓度最好，它在0.1至1.0范围为野生。%。
In particular, when the refractory metal silicide film is a tungsten silicide film, the concentration of cu is preferable that it is in the range of 0.1 to 1.0 wt. %.
进行第二次退火以便将通过第一次退火的两次热循环形成的富金属硅化物相转化成处于其最低电阻相的金属硅化物(68)相。
A second anneal is performed to convert the metal rich silicide phase formed by the two thermal cycles of the first anneal into a metal silicide (68) phase that is in its lowest resistance phase.
我们现在所知道的是，这种液态硅化物是在碳氢溶剂的环境下进行紫外辐照，从而使得这种液态硅化物的片段聚合为一个聚硅烷的形态。
We do know that it was developed by emitting ultraviolet rays at CPS in a carbon hydrogen solvent in order to polymerize part of the CPS to make a polysilane.
我们现在所知道的是，这种液态硅化物是在碳氢溶剂的环境下进行紫外辐照，从而使得这种液态硅化物的片段聚合为一个聚硅烷的形态。
We do know that it was developed by emitting ultraviolet rays at CPS in a carbon hydrogen solvent in order to polymerize part of the CPS to make a polysilane.
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